PART |
Description |
Maker |
AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY 512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32 512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 12 ns, CDIP32 512K X 8 STANDARD SRAM, 25 ns, CQCC32 512K X 8 STANDARD SRAM, CDSO32 512K X 8 STANDARD SRAM, 15 ns, CDSO32 512K X 8 STANDARD SRAM, 12 ns, CDFP32
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Austin Semiconductor, Inc Micross Components AUSTIN SEMICONDUCTOR INC
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AS8S512K32P-17L/Q AS8S512K32P-17L/XT AS8S512K32P-1 |
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66
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Austin Semiconductor, Inc
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AS8SLC512K32Q1-12L_883C AS8SLC512K32Q1-12L_IT AS8S |
512K x 32 SRAM SRAM Memory Array MCM
|
Austin Semiconductor
|
GS74108J-15 GS74108TP-8I GS74108J-8I GS74108TP-15 |
512K x 8 4Mb Asynchronous SRAM 12k × 8 4Mb的异步SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36 512K X 8 STANDARD SRAM, 8 ns, PDSO44 0.400 INCH, TSOP2-44
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GSI Technology, Inc. Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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AS7C33512NTF18A AS7C33512NTF18A.V.1.1 AS7C33512NTF |
3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 10 ns, PQFP100 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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AS7C4096 AS7C34096-15JC AS7C34096-10JC AS7C34096-1 |
5V/3.3V 512K X8 CMOS SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-TSSOP -55 to 125 512K X 8 STANDARD SRAM, 20 ns, PDSO44 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-TSSOP -55 to 125 512K X 8 STANDARD SRAM, 20 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TVSOP -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO44 Dual 4-Input Positive-AND Gate 14-SOIC -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO36 TV 12C 8#20 4#16 SKT PLUG 512K X 8 STANDARD SRAM, 10 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 DUAL MONOSTABLE MULTIVIBRATORS 16-SOIC -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 Dual 4-Input Positive-AND Gate 14-SO -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TV 26C 26#20 PIN WALL RECP 512K X 8 STANDARD SRAM, 10 ns, PDSO44 TV 5C 5#16 PIN WALL RECP SRAM - 5V Fast Asynchronous
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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CY7C1382CV25 CY7C1382CV25-167AC CY7C1382CV25-167AI |
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
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Cypress Semiconductor, Corp.
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AS5C4008ECJ-17L/IT AS5C4008ECJ-17L/XT AS5C4008ECJ- |
512K x 8 SRAM SRAM MEMORY ARRAY 512K x 8 SRAM memory array
|
Austin Semiconductor
|
CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
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White Electronic Designs Corporation
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